Crystals Land

  LGS (La₃Ga₅SiO₁₄)

 Langasite crystal e.g. La₃Ga₅SiO₁₄ was found excellent for BAW and SAW devices due to its excellent acoustic characteristics. It has 3 ~4 times larger electro-mechanical coupling coefficient than quartz, better frequency-temperature characteristics and smaller equivalent series resistance.

Physical Properties:

Crystal Structure	trigonal system, group 33. a= 8.1783Å c = 5.1014Å
Growth Method	Czochralski
Hardness	6.6 Moh’s
Density	5.754 g/cm3
Melt Point	1470 °C ( phase transition point: N/A)
Thermal expansion (x10-6/ °C)	a11: 5.10  a33: 3.61
Acoustic velocity, SAW Frequency constant, BAW Piezoelectric coupling ,	2400 ( m/sec ) 1380 ( kHz/mm ) K2 (%) BAW: 2.21 SAW: 0.3
Inclusion	N0

Standard Wafer Specifications:

Orientation	Orientation specified by customer. ±0.5°
Polished surface	EPI polished on one side or two sides to Ra < 10Å Working Area: Wafer diameter minus 2 mm BOW: < 10μm for 2” wafer No chips out on working area. In the edge, chip width < 0.5 mm Pit and scratches: < 3 per wafer or < 20 per 100 wafers
Standard Thickness	0.5 mm ±0.05mm TTV < 5μm
Standard Diameter	Ф35 ( mm )
Special size and orientation are available upon request